HGS750N15M Datasheet. Specs and Replacement

Type Designator: HGS750N15M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOIC-8

HGS750N15M substitution

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HGS750N15M datasheet

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HGS750N15M

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HGS750N15M

HGS750N15ML P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, logic level 63 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 4.6 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed ... See More ⇒

Detailed specifications: HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S, HGS650N15SL, IRLZ44N, HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A

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