All MOSFET. HGT009N08A Datasheet

 

HGT009N08A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGT009N08A
   Marking Code: GT009N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 360 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 318 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 2871 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: TOLL

 HGT009N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGT009N08A Datasheet (PDF)

 ..1. Size:990K  cn hunteck
hgt009n08a.pdf

HGT009N08A
HGT009N08A

P-1HGT009N08A80V N-Ch Power MOSFETFeature High Speed Power Smooth Switching80 VVDS Enhanced Body diode dv/dt capability0.75RDS(on),typ mW Enhanced Avalanche Ruggedness585 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested360 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Ci

 9.1. Size:992K  cn hunteck
hgt007ne6a.pdf

HGT009N08A
HGT009N08A

P-1HGT007NE6A65V N-Ch Power MOSFETFeature High Speed Power Smooth Switching65 VVDS Enhanced Body diode dv/dt capability0.62RDS(on),typ mW Enhanced Avalanche Ruggedness674 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested360 AID (Package Limited) Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Ci

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History: IXFR180N085

 

 
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