HGT019N08A Datasheet and Replacement
Type Designator: HGT019N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 319 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 240 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 1396 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TOLL
HGT019N08A substitution
HGT019N08A Datasheet (PDF)
hgt019n08a.pdf

HGT019N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching1.6RDS(on),typ mW Enhanced Body diode dv/dt capability294 AID (Sillicon Limited) Enhanced Avalanche Ruggedness240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
hgt016ne6a.pdf

HGT016NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability1.3RDS(on),typ mW Enhanced Avalanche Ruggedness355 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
hgt015n10s.pdf

HGT015N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.3RDS(on),typ mW Enhanced Avalanche Ruggedness446 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested360 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S
Datasheet: HGS650N15S , HGS650N15SL , HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , IRFB4115 , HGT022N12S , HGT025N10A , HGT035N12S , HGT041N15S , HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S .
History: ZVN4206AVSTOB
Keywords - HGT019N08A MOSFET datasheet
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History: ZVN4206AVSTOB



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