HGT022N12S Datasheet. Specs and Replacement

Type Designator: HGT022N12S  📄📄 

Marking Code: GT022N12S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 341 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 140 nC

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1347 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TOLL

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HGT022N12S datasheet

 ..1. Size:984K  cn hunteck
 hgt022n12s.pdf pdf_icon

HGT022N12S

HGT022N12S P-1 120V N-Ch Power MOSFET Feature High Speed Power Switching 120 V VDS Enhanced Body diode dv/dt capability 1.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 341 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/D... See More ⇒

 9.1. Size:1221K  cn hunteck
 hgt025n10a.pdf pdf_icon

HGT022N12S

HGT025N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 1.97 RDS(on),typ mW Enhanced Body diode dv/dt capability 258 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Sw... See More ⇒

Detailed specifications: HGS650N15SL, HGS750N15M, HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, 10N60, HGT025N10A, HGT035N12S, HGT041N15S, HGT055N15S, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL

Keywords - HGT022N12S MOSFET specs

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