All MOSFET. HGT022N12S Datasheet

 

HGT022N12S Datasheet and Replacement


   Type Designator: HGT022N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 341 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1347 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TOLL
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HGT022N12S Datasheet (PDF)

 ..1. Size:984K  cn hunteck
 hgt022n12s.pdf pdf_icon

HGT022N12S

HGT022N12S P-1120V N-Ch Power MOSFETFeature High Speed Power Switching120 VVDS Enhanced Body diode dv/dt capability1.8RDS(on),typ mW Enhanced Avalanche Ruggedness341 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/D

 9.1. Size:1221K  cn hunteck
 hgt025n10a.pdf pdf_icon

HGT022N12S

HGT025N10AP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching 1.97RDS(on),typ mW Enhanced Body diode dv/dt capability 258 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Sw

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History: WMM11N80M3 | IRFI7536G | AON7240 | HGS120N10SL | FDMS9620S

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