HGT035N12S Datasheet. Specs and Replacement

Type Designator: HGT035N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 203 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 716 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: TOLL

HGT035N12S substitution

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HGT035N12S datasheet

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HGT035N12S

P-1 HGT035N12S 120V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 120 V VDS Enhanced Body diode dv/dt capability 3.3 RDS(on),TYP mW Enhanced Avalanche Ruggedness 203 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain Power Tool... See More ⇒

Detailed specifications: HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, IRFB4115, HGT041N15S, HGT055N15S, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL

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