All MOSFET. HGT035N12S Datasheet

 

HGT035N12S Datasheet and Replacement


   Type Designator: HGT035N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 203 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 716 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TOLL
 

 HGT035N12S substitution

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HGT035N12S Datasheet (PDF)

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HGT035N12S

P-1HGT035N12S120V N-Ch Power MOSFETFeature High Speed Power Smooth Switching120 VVDS Enhanced Body diode dv/dt capability3.3RDS(on),TYP mW Enhanced Avalanche Ruggedness203 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power Tool

Datasheet: HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , HGT019N08A , HGT022N12S , HGT025N10A , IRFB4115 , HGT041N15S , HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL .

History: HGW059N12S | NVD3055-094

Keywords - HGT035N12S MOSFET datasheet

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