All MOSFET. HGT035N12S Datasheet

 

HGT035N12S Datasheet and Replacement


   Type Designator: HGT035N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 203 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 716 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TOLL
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HGT035N12S Datasheet (PDF)

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HGT035N12S

P-1HGT035N12S120V N-Ch Power MOSFETFeature High Speed Power Smooth Switching120 VVDS Enhanced Body diode dv/dt capability3.3RDS(on),TYP mW Enhanced Avalanche Ruggedness203 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power Tool

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