HGT041N15S Datasheet and Replacement
Type Designator: HGT041N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 239 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 773 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TOLL
HGT041N15S substitution
HGT041N15S Datasheet (PDF)
hgt041n15s.pdf
P-1HGT041N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching3.8RDS(on),typ mW Enhanced Body diode dv/dt capability239 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Power Tool
Datasheet: HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , HGT019N08A , HGT022N12S , HGT025N10A , HGT035N12S , 2N7000 , HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M .
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