HGT041N15S Datasheet. Specs and Replacement

Type Designator: HGT041N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 239 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 773 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TOLL

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HGT041N15S datasheet

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HGT041N15S

P-1 HGT041N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching 3.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 239 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Power Tool... See More ⇒

Detailed specifications: HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, 2N7000, HGT055N15S, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M

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