All MOSFET. HGT041N15S Datasheet

 

HGT041N15S Datasheet and Replacement


   Type Designator: HGT041N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 239 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TOLL
 

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HGT041N15S Datasheet (PDF)

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HGT041N15S

P-1HGT041N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching3.8RDS(on),typ mW Enhanced Body diode dv/dt capability239 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Power Tool

Datasheet: HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , HGT019N08A , HGT022N12S , HGT025N10A , HGT035N12S , IRF9540 , HGT055N15S , HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M .

History: 2N6968JANTXV | AO3485

Keywords - HGT041N15S MOSFET datasheet

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