HGT055N15S Datasheet. Specs and Replacement

Type Designator: HGT055N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 168 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 463 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TOLL

HGT055N15S substitution

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HGT055N15S datasheet

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HGT055N15S

HGT055N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TOLL 4.8 RDS(on),TYP mW Enhanced Body diode dv/dt capability 168 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain ... See More ⇒

Detailed specifications: HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S, P55NF06, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL

Keywords - HGT055N15S MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.