HGT055N15S Datasheet. Specs and Replacement
Type Designator: HGT055N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 168 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 463 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TOLL
HGT055N15S substitution
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HGT055N15S datasheet
hgt055n15s.pdf
HGT055N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TOLL 4.8 RDS(on),TYP mW Enhanced Body diode dv/dt capability 168 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Drain ... See More ⇒
Detailed specifications: HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S, P55NF06, HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL
Keywords - HGT055N15S MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HGW055N10SL
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