All MOSFET. HGW059N12S Datasheet

 

HGW059N12S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGW059N12S
   Marking Code: GW059N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO-262

 HGW059N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGW059N12S Datasheet (PDF)

 ..1. Size:803K  cn hunteck
 hgw059n12s.pdf

HGW059N12S HGW059N12S

HGW059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness113 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed

 0.1. Size:805K  cn hunteck
 hgw059n12sl.pdf

HGW059N12S HGW059N12S

HGW059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and

 9.1. Size:773K  cn hunteck
 hgw053n06sl.pdf

HGW059N12S HGW059N12S

HGW053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.1RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness105 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

 9.2. Size:786K  cn hunteck
 hgw055n10sl.pdf

HGW059N12S HGW059N12S

HGW055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 153 AID (Sillicon Limited) Enhanced Body diode dv/dt capability120 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion D

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History: RCJ160N20

 

 
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