HGW059N12S Datasheet. Specs and Replacement

Type Designator: HGW059N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO-262

HGW059N12S substitution

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HGW059N12S datasheet

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 hgw059n12s.pdf pdf_icon

HGW059N12S

HGW059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching 4.7 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 113 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed ... See More ⇒

 0.1. Size:805K  cn hunteck
 hgw059n12sl.pdf pdf_icon

HGW059N12S

HGW059N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching, Logic Level 5 RDS(on),typ m Enhanced Body diode dv/dt capability 160 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and... See More ⇒

 9.1. Size:773K  cn hunteck
 hgw053n06sl.pdf pdf_icon

HGW059N12S

HGW053N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 4.1 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 105 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai... See More ⇒

 9.2. Size:786K  cn hunteck
 hgw055n10sl.pdf pdf_icon

HGW059N12S

HGW055N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.9 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8 RDS(on),typ VGS=4.5V m switching,Logic level 153 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 120 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion D... See More ⇒

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Detailed specifications: HGT019N08A, HGT022N12S, HGT025N10A, HGT035N12S, HGT041N15S, HGT055N15S, HGW053N06SL, HGW055N10SL, IRFP250N, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, HGW130N12S, HGW190N15S, HGW190N15SL

Keywords - HGW059N12S MOSFET specs

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