All MOSFET. HGW105N15M Datasheet

 

HGW105N15M MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGW105N15M
   Marking Code: GW105N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-262

 HGW105N15M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGW105N15M Datasheet (PDF)

 ..1. Size:804K  cn hunteck
 hgw105n15m.pdf

HGW105N15M HGW105N15M

HGW105N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-262 8.8RDS(on),typ m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2

 5.1. Size:808K  cn hunteck
 hgw105n15sl.pdf

HGW105N15M HGW105N15M

HGW105N15SLP-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic Level9RDS(on),typ m Enhanced Body diode dv/dt capability9ID (Sillicon Limited) m Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification

 9.1. Size:787K  cn hunteck
 hgw100n12sl.pdf

HGW105N15M HGW105N15M

HGW100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchin

 9.2. Size:780K  cn hunteck
 hgw100n12s.pdf

HGW105N15M HGW105N15M

HGW100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-262 8.6RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2TO-262

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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