All MOSFET. HGW130N12S Datasheet

 

HGW130N12S Datasheet and Replacement


   Type Designator: HGW130N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO-262
 

 HGW130N12S substitution

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HGW130N12S Datasheet (PDF)

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HGW130N12S

P-1HGW130N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching10RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability73.8 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

Datasheet: HGW053N06SL , HGW055N10SL , HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M , HGW105N15SL , 2N7002 , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 .

History: HGW190N15SL | PHB45N03LT

Keywords - HGW130N12S MOSFET datasheet

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