HGW130N12S Datasheet. Specs and Replacement

Type Designator: HGW130N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TO-262

HGW130N12S substitution

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HGW130N12S datasheet

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HGW130N12S

P-1 HGW130N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching 10 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 73.8 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒

Detailed specifications: HGW053N06SL, HGW055N10SL, HGW059N12S, HGW059N12SL, HGW100N12S, HGW100N12SL, HGW105N15M, HGW105N15SL, 2N7002, HGW190N15S, HGW190N15SL, HGW195N15S, HTA1K2P10, HTB025N03, HTD025N03, HTD035N03, HTD040N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.