HGW190N15SL Datasheet and Replacement
Type Designator: HGW190N15SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 69 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 158 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-262
HGW190N15SL substitution
HGW190N15SL Datasheet (PDF)
hgw190n15sl.pdf

HGW190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
hgw190n15s.pdf

HGW190N15S P-1150V N-Ch Power MOSFET150 VVDSFeatureTO-262 16RDS(on),typ m Optimized for high speed smooth switching79 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and High Speed CircuitPi
hgw195n15s.pdf

HGW195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitTO
Datasheet: HGW059N12S , HGW059N12SL , HGW100N12S , HGW100N12SL , HGW105N15M , HGW105N15SL , HGW130N12S , HGW190N15S , 2N7000 , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 .
History: CS1N80A1H
Keywords - HGW190N15SL MOSFET datasheet
HGW190N15SL cross reference
HGW190N15SL equivalent finder
HGW190N15SL lookup
HGW190N15SL substitution
HGW190N15SL replacement
History: CS1N80A1H



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