HTD035N03 Datasheet and Replacement
Type Designator: HTD035N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 635 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-252
HTD035N03 substitution
HTD035N03 Datasheet (PDF)
htd035n03.pdf

HTD035N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness80 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part Nu
Datasheet: HGW105N15SL , HGW130N12S , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , AON7410 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 .
History: AFN3309WS | HTD058N03R | AM4426N | IRFS9522 | DMN24H11DS | IRFS9521 | DMN24H3D5L
Keywords - HTD035N03 MOSFET datasheet
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History: AFN3309WS | HTD058N03R | AM4426N | IRFS9522 | DMN24H11DS | IRFS9521 | DMN24H3D5L



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