All MOSFET. HTD035N03 Datasheet

 

HTD035N03 Datasheet and Replacement


   Type Designator: HTD035N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 635 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-252
 

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HTD035N03 Datasheet (PDF)

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HTD035N03

HTD035N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness80 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part Nu

Datasheet: HGW105N15SL , HGW130N12S , HGW190N15S , HGW190N15SL , HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , 2SK3568 , HTD040N03 , HTD058N03R , HTD060N03 , HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 .

History: AP4453GYT | SI7613DN | C3M0120090J | SSF2610E | FQD7P06TF | TPCA8027-H | IPA60R385CP

Keywords - HTD035N03 MOSFET datasheet

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