HTD035N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD035N03
Marking Code: TD035N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 64 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 635 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-252
HTD035N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD035N03 Datasheet (PDF)
..1. Size:890K cn hunteck
htd035n03.pdf
htd035n03.pdf
HTD035N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level3RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness80 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part Nu
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