FDS9431A PDF and Equivalents Search

 

FDS9431A Specs and Replacement

Type Designator: FDS9431A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SO-8

FDS9431A substitution

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FDS9431A datasheet

 ..1. Size:75K  fairchild semi
fds9431a.pdf pdf_icon

FDS9431A

September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistance and ... See More ⇒

 ..2. Size:358K  fairchild semi
fds9431a f085.pdf pdf_icon

FDS9431A

February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.180 @ VGS = -2.5 V. technology. This very high density process has been especially tailored to minimize on-state resistan... See More ⇒

 ..3. Size:176K  onsemi
fds9431a.pdf pdf_icon

FDS9431A

September 1999 FDS9431A P-Channel 2.5V Specified MOSFET Features General Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 V This P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V. using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast ... See More ⇒

 8.1. Size:64K  fairchild semi
fds9435a.pdf pdf_icon

FDS9431A

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave... See More ⇒

Detailed specifications: SP07N65, FDS8978, 2SK3116B, FDS8984, SDU07N65, FDS8984F085, SDU06N60, FDS9400A, AOD4184A, FDS9431AF085, FDS9926A, FDS9933BZ, FDS9934C, SDU05N04, FDS9945, FDS9953A, FDS9958

Keywords - FDS9431A MOSFET specs

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