FDS9431A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDS9431A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 170 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS9431A
FDS9431A Datasheet (PDF)
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistance and
fds9431a f085.pdf

February 2010tmFDS9431A_F085P-Channel 2.5V Specified MOSFETFeaturesGeneral DescriptionThis P-Channel 2.5V specified MOSFET is produced -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vusing Fairchild's proprietary, high cell density, DMOSRDS(ON) = 0.180 @ VGS = -2.5 V.technology. This very high density process has beenespecially tailored to minimize on-state resistan
fds9431a.pdf

September 1999FDS9431AP-Channel 2.5V Specified MOSFETFeaturesGeneral Description -3.5 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 VThis P-Channel 2.5V specified MOSFET is produced RDS(ON) = 0.180 @ VGS = -2.5 V.using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- Fast
fds9435a.pdf

October 2001 FDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 5.3 A, 30 V R = 50 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 80 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave
Другие MOSFET... SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , SDU06N60 , FDS9400A , HY1906P , FDS9431AF085 , FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 , FDS9945 , FDS9953A , FDS9958 .
History: RU75210R | SP8255



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