All MOSFET. HTD070N04 Datasheet

 

HTD070N04 Datasheet and Replacement


   Type Designator: HTD070N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-252
 

 HTD070N04 substitution

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HTD070N04 Datasheet (PDF)

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HTD070N04

HTD070N04 P-140V N-Ch Power MOSFETFeature40 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part Nu

Datasheet: HGW195N15S , HTA1K2P10 , HTB025N03 , HTD025N03 , HTD035N03 , HTD040N03 , HTD058N03R , HTD060N03 , TK10A60D , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 .

History: AP18P10AGH-HF | TPD60R1K5MFD

Keywords - HTD070N04 MOSFET datasheet

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