HTD070N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD070N04
Marking Code: TD070N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
HTD070N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD070N04 Datasheet (PDF)
htd070n04.pdf
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HTD070N04 P-140V N-Ch Power MOSFETFeature40 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part Nu
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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