HTD2K1P10 Datasheet. Specs and Replacement

Type Designator: HTD2K1P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm

Package: TO-252

HTD2K1P10 substitution

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HTD2K1P10 datasheet

 ..1. Size:577K  cn hunteck
 htd2k1p10.pdf pdf_icon

HTD2K1P10

HTD2K1P10 P-1 100V P-Ch Power MOSFET Feature -100 V VDS High Speed Power Switching, Logic Level 182 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 190 RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested -10 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252... See More ⇒

 9.1. Size:1612K  cn hunteck
 htd2k4p15t hti2k4p15t.pdf pdf_icon

HTD2K1P10

HTD2K4P15T , P-1 HTI2K4P15T 135V P-Ch Power MOSFET Feature -135 V VDS High Speed Power Smooth Switching 200 RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability -12 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ... See More ⇒

Detailed specifications: HTD070N04, HTD080P03, HTD090N03, HTD140N03, HTD150P06, HTD160P04, HTD1K5N10, HTD200P03, CS150N03A8, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, HTD480N06P

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.