All MOSFET. HTD2K1P10 Datasheet

 

HTD2K1P10 Datasheet and Replacement


   Type Designator: HTD2K1P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: TO-252
 

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HTD2K1P10 Datasheet (PDF)

 ..1. Size:577K  cn hunteck
 htd2k1p10.pdf pdf_icon

HTD2K1P10

HTD2K1P10 P-1100V P-Ch Power MOSFETFeature-100 VVDS High Speed Power Switching, Logic Level182RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness190RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252

 9.1. Size:1612K  cn hunteck
 htd2k4p15t hti2k4p15t.pdf pdf_icon

HTD2K1P10

HTD2K4P15T , P-1HTI2K4P15T135V P-Ch Power MOSFETFeature-135 VVDS High Speed Power Smooth Switching200RDS(on),typ VGS=-10V mW Enhanced Body diode dv/dt capability-12 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power

Datasheet: HTD070N04 , HTD080P03 , HTD090N03 , HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , IRLB4132 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P .

History: BUZ73AL | PMPB12UNEA | SSM3K329R | SL21N65CF | TK12A55D | MP4N150

Keywords - HTD2K1P10 MOSFET datasheet

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