HTD300N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD300N10
Marking Code: TD300N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 38 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 209 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
HTD300N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD300N10 Datasheet (PDF)
..1. Size:894K cn hunteck
htd300n10.pdf
htd300n10.pdf
HTD300N10 P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level26RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part
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