All MOSFET. HTD300N10 Datasheet

 

HTD300N10 Datasheet and Replacement


   Type Designator: HTD300N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 209 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-252
 

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HTD300N10 Datasheet (PDF)

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HTD300N10

HTD300N10 P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level26RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: HTD140N03 , HTD150P06 , HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , 20N50 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 .

History: HGD750N15ML | FDS7066N7 | IXFH16N90Q | HGN042N10AL | IXTH68P20T | UF830KL-TA3-T | DMP2069UFY4

Keywords - HTD300N10 MOSFET datasheet

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