HTD360N10 Datasheet. Specs and Replacement

Type Designator: HTD360N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO-252

HTD360N10 substitution

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HTD360N10 datasheet

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HTD360N10

HTD360N10 P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 32 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 30 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial TO-252 Gate 2 Src 3 1 Part... See More ⇒

Detailed specifications: HTD160P04, HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, TK10A60D, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03

Keywords - HTD360N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.