All MOSFET. HTD360N10 Datasheet

 

HTD360N10 Datasheet and Replacement


   Type Designator: HTD360N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-252
 

 HTD360N10 substitution

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HTD360N10 Datasheet (PDF)

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HTD360N10

HTD360N10 P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level32RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness30 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialTO-252Gate2Src31Part

Datasheet: HTD160P04 , HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , IRFZ24N , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 .

History: RJK5015DPM | STS4DNFS30

Keywords - HTD360N10 MOSFET datasheet

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