All MOSFET. HTD410P06 Datasheet

 

HTD410P06 Datasheet and Replacement


   Type Designator: HTD410P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO-252
 

 HTD410P06 substitution

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HTD410P06 Datasheet (PDF)

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HTD410P06

HTD410P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level34RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness44RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-26 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Dr

Datasheet: HTD1K5N10 , HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , AO4407 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 .

History: HTD350C04 | AP9997GK | AP9985GM

Keywords - HTD410P06 MOSFET datasheet

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