HTD410P06 Datasheet. Specs and Replacement

Type Designator: HTD410P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-252

HTD410P06 substitution

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HTD410P06 datasheet

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HTD410P06

HTD410P06 P-1 60V P-Ch Power MOSFET Feature -60 V VDS High Speed Power Switching, Logic Level 34 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 44 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -26 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252 Dr... See More ⇒

Detailed specifications: HTD1K5N10, HTD200P03, HTD2K1P10, HTD2K4P15T, HTI2K4P15T, HTD300N10, HTD350C04, HTD360N10, AO4407, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06

Keywords - HTD410P06 MOSFET specs

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