HTD410P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTD410P06
Marking Code: TD410P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO-252
HTD410P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTD410P06 Datasheet (PDF)
..1. Size:580K cn hunteck
htd410p06.pdf
htd410p06.pdf
HTD410P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level34RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness44RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-26 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252Dr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
