HTD440P04 PDF Specs and Replacement
Type Designator: HTD440P04
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO-252
HTD440P04 substitution
HTD440P04 PDF Specs
htd440p04.pdf
HTD440P04 P-1 40V P-Ch Power MOSFET Feature -40 V VDS High Speed Power Switching, Logic Level 38 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 50 RDS(on),typ VGS=7V m 100% UIS Tested, 100% Rg Tested -20 A ID (Sillicon Limited) Lead Free, Halogen Free -12 A ID (Package Limited) Application Load Switches Hard Switching and High Speed Circuit ... See More ⇒
Detailed specifications: HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , BS170 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 .
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