All MOSFET. HTD440P04 Datasheet

 

HTD440P04 Datasheet and Replacement


   Type Designator: HTD440P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO-252
 

 HTD440P04 substitution

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HTD440P04 Datasheet (PDF)

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HTD440P04

HTD440P04 P-140V P-Ch Power MOSFETFeature-40 VVDS High Speed Power Switching, Logic Level38RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness50RDS(on),typ VGS=7V m 100% UIS Tested, 100% Rg Tested-20 AID (Sillicon Limited) Lead Free, Halogen Free-12 AID (Package Limited)Application Load Switches Hard Switching and High Speed Circuit

Datasheet: HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , 18N50 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 .

History: 2SK3770-01MR | HM45P02D

Keywords - HTD440P04 MOSFET datasheet

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