HTD440P04 PDF and Equivalents Search

 

HTD440P04 PDF Specs and Replacement


   Type Designator: HTD440P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO-252
 

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HTD440P04 PDF Specs

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HTD440P04

HTD440P04 P-1 40V P-Ch Power MOSFET Feature -40 V VDS High Speed Power Switching, Logic Level 38 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 50 RDS(on),typ VGS=7V m 100% UIS Tested, 100% Rg Tested -20 A ID (Sillicon Limited) Lead Free, Halogen Free -12 A ID (Package Limited) Application Load Switches Hard Switching and High Speed Circuit ... See More ⇒

Detailed specifications: HTD200P03 , HTD2K1P10 , HTD2K4P15T , HTI2K4P15T , HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , BS170 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 .

Keywords - HTD440P04 MOSFET specs

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