All MOSFET. HTJ270N03 Datasheet

 

HTJ270N03 Datasheet and Replacement


   Type Designator: HTJ270N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23
 

 HTJ270N03 substitution

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HTJ270N03 Datasheet (PDF)

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HTJ270N03

HTJ270N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level19RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness30RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested6 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT

Datasheet: HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , 4N60 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 .

History: BLP028N10-P | BLP023N10-T | CHM50N06PAGP | IRFS3207ZPBF

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