HTJ270N03 Datasheet. Specs and Replacement
Type Designator: HTJ270N03 📄📄
Marking Code: 14
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 10.9 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOT23
HTJ270N03 substitution
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HTJ270N03 datasheet
htj270n03.pdf
HTJ270N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 19 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 30 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 6 A ID (Sillicon Limited) Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT... See More ⇒
Detailed specifications: HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, AO3407, HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03
Keywords - HTJ270N03 MOSFET specs
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History: OSG80R190PF
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