HTJ440P02E MOSFET. Datasheet pdf. Equivalent
Type Designator: HTJ440P02E
Marking Code: 2E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12.9 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 132 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT-23
HTJ440P02E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTJ440P02E Datasheet (PDF)
htj440p02e.pdf
HTJ440P02E P-120V P-Ch Power MOSFET-20 VVDSFeature37RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level55RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23Drain
htj440p02.pdf
HTJ440P02 P-120V P-Ch Power MOSFET-20 VVDSFeature37RDS(on),typ VGS=4.5V m High Speed Power Switching, Logic Level55RDS(on),typ VGS=2.5V m Enhanced Avalanche Ruggedness65RDS(on),typ VGS=1.8V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainD
htj440p03.pdf
HTJ440P03 P-130V P-Ch Power MOSFET-30 VVDSFeature32RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level39RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=2.5V m Lead Free, Halogen Free-4 AID (Sillicon Limited)Application Load Switches Hard Switching and High Speed Circuit BLDC MotorSOT-23DrainD
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .