HTJ500P03 Datasheet. Specs and Replacement

Type Designator: HTJ500P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.04 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-23

HTJ500P03 substitution

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HTJ500P03 datasheet

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HTJ500P03

HTJ500P03 P-1 30V P-Ch Power MOSFET -30 V VDS Feature 42 RDS(on),typ VGS=10V m High Speed Power Switching, Logic Level 66 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness -4.5 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor SOT-23 Drain D S Gate G Part Number Packa... See More ⇒

 8.1. Size:915K  cn hunteck
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HTJ500P03

HTJ500N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 43 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 60 RDS(on),typ VGS=2.5V m 100% UIS Tested, 100% Rg Tested 3.5 A ID (Sillicon Limited) Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial S... See More ⇒

Detailed specifications: HTJ270N03, HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, 8N60, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P

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