All MOSFET. HTJ600N06 Datasheet

 

 

HTJ600N06 Datasheet and Replacement


   Type Designator: HTJ600N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

 HTJ600N06 substitution

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HTJ600N06 Datasheet (PDF)

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HTJ600N06

HTJ600N06P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level50RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness3.5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number P

Datasheet: HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , P60NF06 , HTJ650P02 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 .

History: HSBB3056

Keywords - HTJ600N06 MOSFET datasheet

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