HTJ600N06 Datasheet. Specs and Replacement

Type Designator: HTJ600N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

HTJ600N06 substitution

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HTJ600N06 datasheet

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HTJ600N06

HTJ600N06 P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 50 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 3.5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number P... See More ⇒

Detailed specifications: HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, P60NF06, HTJ650P02, HTJ850P03, HTL140N02, HTM035N03, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.