All MOSFET. HTM035N03 Datasheet

 

HTM035N03 Datasheet and Replacement


   Type Designator: HTM035N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 381 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN3X3
 

 HTM035N03 substitution

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HTM035N03 Datasheet (PDF)

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HTM035N03

HTM035N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level2.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN3*3GateSrcPart Number Pa

Datasheet: HTJ440P03 , HTJ450N02 , HTJ500N03 , HTJ500P03 , HTJ600N06 , HTJ650P02 , HTJ850P03 , HTL140N02 , IRFZ48N , HTM040N03 , HTM040N03P , HTM058N03P , HTM060N03 , HTM063P02 , HTM095P02 , HTM105P03P , HTM120N03 .

History: APT3580BN | RSR030N06

Keywords - HTM035N03 MOSFET datasheet

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