All MOSFET. HTM035N03 Datasheet

 

HTM035N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTM035N03
   Marking Code: TM035N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 381 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN3X3

 HTM035N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTM035N03 Datasheet (PDF)

 ..1. Size:906K  cn hunteck
 htm035n03.pdf

HTM035N03 HTM035N03

HTM035N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level2.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN3*3GateSrcPart Number Pa

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