HTM035N03 Datasheet. Specs and Replacement

Type Designator: HTM035N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 381 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN3X3

HTM035N03 substitution

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HTM035N03 datasheet

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HTM035N03

HTM035N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 2.8 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial DFN3*3 Gate Src Part Number Pa... See More ⇒

Detailed specifications: HTJ440P03, HTJ450N02, HTJ500N03, HTJ500P03, HTJ600N06, HTJ650P02, HTJ850P03, HTL140N02, STP65NF06, HTM040N03, HTM040N03P, HTM058N03P, HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.