All MOSFET. HTM060N03 Datasheet

 

HTM060N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTM060N03
   Marking Code: TM060N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34.6 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3X3

 HTM060N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTM060N03 Datasheet (PDF)

 ..1. Size:1091K  cn hunteck
 htm060n03.pdf

HTM060N03 HTM060N03

HTM060N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness26 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number Pac

 9.1. Size:575K  cn hunteck
 htm063p02.pdf

HTM060N03 HTM060N03

HTM063P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-46 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Numbe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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