HTM060N03 Datasheet and Replacement
Type Designator: HTM060N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 328 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN3X3
HTM060N03 substitution
HTM060N03 Datasheet (PDF)
htm060n03.pdf

HTM060N03P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness26 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number Pac
htm063p02.pdf

HTM063P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness-46 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Numbe
Datasheet: HTJ600N06 , HTJ650P02 , HTJ850P03 , HTL140N02 , HTM035N03 , HTM040N03 , HTM040N03P , HTM058N03P , RU7088R , HTM063P02 , HTM095P02 , HTM105P03P , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , HTM200P03 .
History: SIHFPC60
Keywords - HTM060N03 MOSFET datasheet
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History: SIHFPC60



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