All MOSFET. HTM200N03 Datasheet

 

HTM200N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTM200N03
   Marking Code: TM200N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3

 HTM200N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTM200N03 Datasheet (PDF)

 ..1. Size:893K  cn hunteck
 htm200n03.pdf

HTM200N03 HTM200N03

HTM200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number P

 8.1. Size:577K  cn hunteck
 htm200p03.pdf

HTM200N03 HTM200N03

HTM200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested-18 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N6800

 

 
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