All MOSFET. HTM200N03 Datasheet

 

HTM200N03 Datasheet and Replacement


   Type Designator: HTM200N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3X3
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HTM200N03 Datasheet (PDF)

 ..1. Size:893K  cn hunteck
 htm200n03.pdf pdf_icon

HTM200N03

HTM200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number P

 8.1. Size:577K  cn hunteck
 htm200p03.pdf pdf_icon

HTM200N03

HTM200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested-18 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STD90N02L-1 | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL

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