HTM200P03 Datasheet. Specs and Replacement

Type Designator: HTM200P03

Marking Code: TM200P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 20.3 nC

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN3X3

HTM200P03 substitution

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HTM200P03 datasheet

 ..1. Size:577K  cn hunteck
 htm200p03.pdf pdf_icon

HTM200P03

HTM200P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 26 RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested -18 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit DFN3x3 DC/DC in Telecoms and ... See More ⇒

 8.1. Size:893K  cn hunteck
 htm200n03.pdf pdf_icon

HTM200P03

HTM200N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, Logic Level 15.5 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 12 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DFN3x3 DC/DC in Telecoms and Inductrial Gate Src Part Number P... See More ⇒

Detailed specifications: HTM060N03, HTM063P02, HTM095P02, HTM105P03P, HTM120N03, HTM120N03P, HTM150A02, HTM200N03, RU7088R, HTN019N03P, HTN020N03, HTN020N04P, HTN021N03, HTN027N03P, HTN027P02, HTN030N03, HTN035N04P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.