HTM200P03 Datasheet and Replacement
Type Designator: HTM200P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 208 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN3X3
HTM200P03 substitution
HTM200P03 Datasheet (PDF)
htm200p03.pdf

HTM200P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness26RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested-18 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitDFN3x3 DC/DC in Telecoms and
htm200n03.pdf

HTM200N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level15.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit DrainDFN3x3 DC/DC in Telecoms and InductrialGateSrcPart Number P
Datasheet: HTM060N03 , HTM063P02 , HTM095P02 , HTM105P03P , HTM120N03 , HTM120N03P , HTM150A02 , HTM200N03 , MMD60R360PRH , HTN019N03P , HTN020N03 , HTN020N04P , HTN021N03 , HTN027N03P , HTN027P02 , HTN030N03 , HTN035N04P .
History: EKI07117 | HTD200P03 | QM0008G | TSM2312CX | 2N7002NXBK | BSC050N03MS | FQA13N80
Keywords - HTM200P03 MOSFET datasheet
HTM200P03 cross reference
HTM200P03 equivalent finder
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History: EKI07117 | HTD200P03 | QM0008G | TSM2312CX | 2N7002NXBK | BSC050N03MS | FQA13N80



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