All MOSFET. HTN020N04P Datasheet

 

HTN020N04P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTN020N04P
   Marking Code: TN020N04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 135 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 814 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: DFN5X6

 HTN020N04P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTN020N04P Datasheet (PDF)

 ..1. Size:773K  cn hunteck
 htn020n04p.pdf

HTN020N04P HTN020N04P

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

 6.1. Size:917K  cn hunteck
 htn020n03.pdf

HTN020N04P HTN020N04P

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 9.1. Size:918K  cn hunteck
 htn027n03p.pdf

HTN020N04P HTN020N04P

HTN027N03P P-130V N-Ch Power MOSFET30 VVDSFeature2.9RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability122 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Sw

 9.2. Size:871K  cn hunteck
 htn021n03.pdf

HTN020N04P HTN020N04P

HTN021N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 9.3. Size:552K  cn hunteck
 htn027p02.pdf

HTN020N04P HTN020N04P

HTN027P02 P-120V P-Ch Power MOSFETFeature-20 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness2.7RDS(on),typ VGS=-4.5V m 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ VGS=-2.5V m Lead Free, Halogen Free-100 AID (Sillicon Limited)DrainApplication Hard Switching and High Speed Circuit

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