Справочник MOSFET. HTN020N04P

 

HTN020N04P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HTN020N04P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 119 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 814 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для HTN020N04P

   - подбор ⓘ MOSFET транзистора по параметрам

 

HTN020N04P Datasheet (PDF)

 ..1. Size:773K  cn hunteck
 htn020n04p.pdf pdf_icon

HTN020N04P

HTN020N04P P-140V N-Ch Power MOSFET40 VVDSFeature1.4RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level1.8RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability181 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Sync

 6.1. Size:917K  cn hunteck
 htn020n03.pdf pdf_icon

HTN020N04P

HTN020N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

 9.1. Size:918K  cn hunteck
 htn027n03p.pdf pdf_icon

HTN020N04P

HTN027N03P P-130V N-Ch Power MOSFET30 VVDSFeature2.9RDS(on),max VGS=10V m Optimized for high speed switching, Logic Level4RDS(on),max VGS=4.5V m Enhanced Body diode dv/dt capability122 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Sw

 9.2. Size:871K  cn hunteck
 htn021n03.pdf pdf_icon

HTN020N04P

HTN021N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, Logic Level1.8RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness100 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialDFN5x6GateSrcPart Number P

ПОКАЗАТЬ ЕЩЁ

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History: SQ3410EV | HGW190N15S | AU10N65S | OSG60R320FT3ZF | FP401 | GSM8918 | 2SK4067I

 

 
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