All MOSFET. HTS060N03 Datasheet

 

HTS060N03 Datasheet and Replacement


   Type Designator: HTS060N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOIC-8
 

 HTS060N03 substitution

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HTS060N03 Datasheet (PDF)

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HTS060N03

HTS060N03 P-130V N-Ch Power MOSFETFeature30 VVDS High Speed Power Switching, logic level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability6.4RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circui

Datasheet: HTN035N04P , HTN036N03P , HTN036P03 , HTN070A03 , HTO350N03 , HTO500P03 , HTP2K1P10 , HTS050N03 , IRFP460 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T .

History: IRF7904PBF-1 | RQ6E045BN | APT20M45BVR | IXTK32P60P | APT5020SVFR | BRCS010N04SZC | IPD060N03L

Keywords - HTS060N03 MOSFET datasheet

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