HTS060N03 Datasheet. Specs and Replacement

Type Designator: HTS060N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 328 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOIC-8

HTS060N03 substitution

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HTS060N03 datasheet

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HTS060N03

HTS060N03 P-1 30V N-Ch Power MOSFET Feature 30 V VDS High Speed Power Switching, logic level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 6.4 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circui... See More ⇒

Detailed specifications: HTN035N04P, HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, HTS050N03, IRFP460, HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03, HTS180P03T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.