All MOSFET. HTS075P03 Datasheet

 

HTS075P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS075P03
   Marking Code: TS075P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 3776 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOIC-8

 HTS075P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS075P03 Datasheet (PDF)

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 hts075p03.pdf

HTS075P03 HTS075P03

HTS075P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and

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