HTS075P03 Datasheet. Specs and Replacement

Type Designator: HTS075P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 3776 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SOIC-8

HTS075P03 substitution

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HTS075P03 datasheet

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HTS075P03

HTS075P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 6 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 9 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -15 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Pin2 Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms and ... See More ⇒

Detailed specifications: HTN036N03P, HTN036P03, HTN070A03, HTO350N03, HTO500P03, HTP2K1P10, HTS050N03, HTS060N03, IRFZ44, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, HTS130P03Z, HTS140P03, HTS180P03T, HTS200N03

Keywords - HTS075P03 MOSFET specs

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