HTS075P03 Datasheet and Replacement
Type Designator: HTS075P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 3776 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOIC-8
HTS075P03 substitution
HTS075P03 Datasheet (PDF)
hts075p03.pdf

HTS075P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level6RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness9RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and
Datasheet: HTN036N03P , HTN036P03 , HTN070A03 , HTO350N03 , HTO500P03 , HTP2K1P10 , HTS050N03 , HTS060N03 , IRFZ44 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 .
History: SHD220721 | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K
Keywords - HTS075P03 MOSFET datasheet
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History: SHD220721 | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K



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