HTS140P03 Datasheet and Replacement
Type Designator: HTS140P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 342 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOIC-8
HTS140P03 substitution
HTS140P03 Datasheet (PDF)
hts140p03.pdf

HTS140P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level12RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness17RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-12 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms an
Datasheet: HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , HTS130P03Z , 10N60 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 .
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