HTS140P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS140P03
Marking Code: TS140P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39.3 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 342 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOIC-8
HTS140P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS140P03 Datasheet (PDF)
..1. Size:612K cn hunteck
hts140p03.pdf
hts140p03.pdf
HTS140P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level12RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness17RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-12 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms an
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