HTS280C03 Specs and Replacement
Type Designator: HTS280C03
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
HTS280C03 substitution
HTS280C03 datasheet
hts280c03.pdf
HTS280C03 P-1 30V Dual N+P Channel Power MOSFET N-CH P-CH Feature 30 -30 V VDS High Speed Power Switching, Logic Level 28 45 RDS(on),max m Enhanced Avalanche Ruggedness 7 -6 A ID (Sillicon Limited) Lead Free, Halogen Free SOIC-8 D2 D2 D1 D1 Application Hard Switching and High Speed Circuit BLDC motor G2 S2 G1 S1 D1 D2 Part Number Package Marking... See More ⇒
Detailed specifications: HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , 2N7000 , HTS410P06 , HTS450P03 , HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 .
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