FDT3N40 Specs and Replacement
Type Designator: FDT3N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: SOT223
FDT3N40 substitution
- MOSFET ⓘ Cross-Reference Search
FDT3N40 datasheet
fdt3n40.pdf
November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to ... See More ⇒
fdt3n40tf.pdf
April 2013 FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF) pr... See More ⇒
Detailed specifications: SDU05N04, FDS9945, FDS9953A, FDS9958, FDS9958F085, FDSS2407, FDT3612, SDU04N65, 50N06, SDU04N60, FDT434P, FDT458P, FDT86102LZ, SDU03N04, FDT86106LZ, SDU02N60, FDT86113LZ
Keywords - FDT3N40 MOSFET specs
FDT3N40 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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