All MOSFET. FDT3N40 Datasheet

 

FDT3N40 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDT3N40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3.4 Ohm

Package: SOT223

FDT3N40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDT3N40 Datasheet (PDF)

1.1. fdt3n40.pdf Size:261K _fairchild_semi

FDT3N40
FDT3N40

November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS(on) = 3.4? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.5 nC) stripe, DMOS technology. • Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to • Fast switc

Datasheet: SDU05N04 , FDS9945 , FDS9953A , FDS9958 , FDS9958_F085 , FDSS2407 , FDT3612 , SDU04N65 , IRF640 , SDU04N60 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 , FDT86106LZ , SDU02N60 , FDT86113LZ .

 


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