FDT3N40 PDF and Equivalents Search

 

FDT3N40 Specs and Replacement

Type Designator: FDT3N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm

Package: SOT223

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FDT3N40 datasheet

 ..1. Size:261K  fairchild semi
fdt3n40.pdf pdf_icon

FDT3N40

November 2009 TM UniFET FDT3N40 400V N-Channel MOSFET Features Description 2A, 400V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 3.7 pF) This advanced technology has been especially tailored to ... See More ⇒

 0.1. Size:812K  fairchild semi
fdt3n40tf.pdf pdf_icon

FDT3N40

April 2013 FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 3.7 pF) pr... See More ⇒

Detailed specifications: SDU05N04, FDS9945, FDS9953A, FDS9958, FDS9958F085, FDSS2407, FDT3612, SDU04N65, 50N06, SDU04N60, FDT434P, FDT458P, FDT86102LZ, SDU03N04, FDT86106LZ, SDU02N60, FDT86113LZ

Keywords - FDT3N40 MOSFET specs

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