SDU04N60 Datasheet and Replacement
Type Designator: SDU04N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO252 DPAK
SDU04N60 substitution
SDU04N60 Datasheet (PDF)
sdu04n60 sdd04n60.pdf

GreenProduct SDU/D04N60aS mHop Microelectronics C orp.Ver 2.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.600V 4A 2.1 @ VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERIN
sdu04n65 sdd04n65.pdf

GreenSDU/D04N65ProductSamHop Microelectronics corp.Ver 2.3N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.650V 4A 2.5 @VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING IN
Datasheet: FDS9945 , FDS9953A , FDS9958 , FDS9958F085 , FDSS2407 , FDT3612 , SDU04N65 , FDT3N40 , IRF640 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 , FDT86106LZ , SDU02N60 , FDT86113LZ , SDU02N25 .
History: 2N6770 | HTN027P02 | FDS6898AZF085 | SVSP80R180SE3 | FDPF8N60ZUT | 2SK3307
Keywords - SDU04N60 MOSFET datasheet
SDU04N60 cross reference
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History: 2N6770 | HTN027P02 | FDS6898AZF085 | SVSP80R180SE3 | FDPF8N60ZUT | 2SK3307



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