SFP090N120C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP090N120C2
Marking Code: 090N120C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 940 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm
Package: TO-220
SFP090N120C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP090N120C2 Datasheet (PDF)
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SFP090N120C2,SFB087N120C2 N-MOSFET 120V, 7.5m, 120AProduct SummaryFeaturesVDS120V Reliable and RuggedRDS(on) typ. 7.5m Lead Free and Green Devices AvailableID120A(RoHS Compliant)100% DVDS TestedpplicationsA100% Avalanche TestedSwitching application Power Management for Inverter Systems.SFP090N120C2 SFB087N120C2N-Channel MOSFETPackage
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SFP090N80C2,SFB087N80C2 N-MOSFET 80V, 7.4m, 80AFeatures Product Summary Extremely low on-resistance RDS(on)VDS80V Excellent QgxRDS(on) product(FOM)RDS(on) typ. 7.4m Qualified according to JEDEC criteria ID80A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies)SFP09
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SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
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