SFP110N200C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFP110N200C3
Marking Code: 110N200C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 341 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 56 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107 Ohm
Package: TO-220
SFP110N200C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFP110N200C3 Datasheet (PDF)
sfp110n200c3 sfb107n200c3 sfw107n200c3.pdf
SFP110N200C3,SFB107N200C3,SFW107N200C3 N-MOSFET 200V, 9.4m, 132AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 9.4m DS(on) typ. Fast switchingI 132A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems
sfp110n200c3 sfb107n200c3.pdf
SFP110N200C3, SFB107N200C3 N-MOSFET 200V, 9.1m, 132AFeatureProduct Summary High Speed Power Smooth SwitchingVDS200V Enhanced Body diode dv/dt capabilityRDS(on)9.1m Enhanced Avalanche RuggednessID 132AApplication 100% DVDS Tested Synchronous Rectification in SMPS100% Avalanche Tested Hard Switching and High Speed Circuit100% Avalanche Tested
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
