SDU02N25 Datasheet and Replacement
Type Designator: SDU02N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2 A
Qg ⓘ - Total Gate Charge: 1.28 nC
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO252 DPAK
SDU02N25 substitution
SDU02N25 Datasheet (PDF)
sdu02n25 sdd02n25.pdf

GreenProductSDU/D02N25aS mHop Microelectronics C orp.Ver 1.1N-Channel Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.250V 2A 3.2 @ VGS=10V Suface Mount Package.GSSDU SERIES SDD SERIESTO - 252AA(D-PAK) TO - 251(I-PAK)ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)
sdu02n60 sdd02n60.pdf

GreenProduct SDU/D02N60aS mHop Microelectronics C orp.Ver 2.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.600V 2A 4.7 @ VGS=10V Suface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERIN
sdu02n70 sdd02n70.pdf

GreenSDU/D02N70ProductaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 2A 5 @VGS=10VSuface Mount Package.DGSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERING
Datasheet: SDU04N60 , FDT434P , FDT458P , FDT86102LZ , SDU03N04 , FDT86106LZ , SDU02N60 , FDT86113LZ , IRF3710 , FDT86244 , FDT86246 , FDU3N40 , SDT03N04 , FDV305N , FDY1002PZ , FDY100PZ , FDY101PZ .
Keywords - SDU02N25 MOSFET datasheet
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