SFP350N100C2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFP350N100C2
   Marking Code: 350N100C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-220

SFP350N100C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS