All MOSFET. SFT016N80C3 Datasheet

 

SFT016N80C3 Datasheet and Replacement


   Type Designator: SFT016N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 2142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TOLL
 

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SFT016N80C3 Datasheet (PDF)

 ..1. Size:807K  cn scilicon
 sft016n80c3.pdf pdf_icon

SFT016N80C3

SFT016N80C3 N-MOSFET 80V, 1.3m, 360AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 1.3m DS(on)typ. Fast switchingI 360A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC

 9.1. Size:911K  cn scilicon
 sft018n100c3.pdf pdf_icon

SFT016N80C3

SFT018N100C3 N-MOSFET 100V, 1.55m, 320AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 1.55m DS(on)typ. Fast switchingI 320A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management D

Datasheet: SFP1800N650C2 , SFP210N200C3 , SFP350N100C2 , SFP60N100 , SFQ020N100C3 , SFQ030N100C3 , SFQ030N80C2 , SFQ230N100 , 2N60 , SFT018N100C3 , SFW024N100C3 , SFW025N100C3 , SFW025N100I3 , SFW027N100C3 , SFW031N100C3 , SFW042N100C3 , SFW043N150C3 .

History: WMN07N80M3 | RJJ1011DPD | KI5905DC | IRHN7130 | TPA120R800A | SST80R1K3S

Keywords - SFT016N80C3 MOSFET datasheet

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