All MOSFET. SFT016N80C3 Datasheet

 

SFT016N80C3 Datasheet and Replacement


   Type Designator: SFT016N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 360 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 2142 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TOLL
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SFT016N80C3 Datasheet (PDF)

 ..1. Size:807K  cn scilicon
 sft016n80c3.pdf pdf_icon

SFT016N80C3

SFT016N80C3 N-MOSFET 80V, 1.3m, 360AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 1.3m DS(on)typ. Fast switchingI 360A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC

 9.1. Size:911K  cn scilicon
 sft018n100c3.pdf pdf_icon

SFT016N80C3

SFT018N100C3 N-MOSFET 100V, 1.55m, 320AFeatures Product Summary Low on resistanceV 100V DS Low gate chargeR 1.55m DS(on)typ. Fast switchingI 320A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ484 | SL2343 | DH1K1N10B | SM8206AO | 2SK2370 | SHD219701 | CS830A8RD

Keywords - SFT016N80C3 MOSFET datasheet

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