SFT016N80C3 Datasheet. Specs and Replacement

Type Designator: SFT016N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 2142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: TOLL

SFT016N80C3 substitution

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SFT016N80C3 datasheet

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SFT016N80C3

SFT016N80C3 N-MOSFET 80V, 1.3m , 360A Features Product Summary Low on resistance V 80V DS Low gate charge R 1.3m DS(on)typ. Fast switching I 360A D(Silicon Limited) High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC ... See More ⇒

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 sft018n100c3.pdf pdf_icon

SFT016N80C3

SFT018N100C3 N-MOSFET 100V, 1.55m , 320A Features Product Summary Low on resistance V 100V DS Low gate charge R 1.55m DS(on)typ. Fast switching I 320A D(Silicon Limited) High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management D... See More ⇒

Detailed specifications: SFP1800N650C2, SFP210N200C3, SFP350N100C2, SFP60N100, SFQ020N100C3, SFQ030N100C3, SFQ030N80C2, SFQ230N100, 20N50, SFT018N100C3, SFW024N100C3, SFW025N100C3, SFW025N100I3, SFW027N100C3, SFW031N100C3, SFW042N100C3, SFW043N150C3

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