All MOSFET. SFW095N200C3 Datasheet

 

SFW095N200C3 Datasheet and Replacement


   Type Designator: SFW095N200C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 337 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 135 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 462 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-247
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SFW095N200C3 Datasheet (PDF)

 ..1. Size:876K  cn scilicon
 sfw095n200c3.pdf pdf_icon

SFW095N200C3

SFW095N200C3 N-MOSFET 200V, 7.9m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 7.9m DS(on)typ Fast switchingI 135A D(silicon limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/D

 9.1. Size:1237K  cn scilicon
 sfp098n200c3 sfb096n200c3 sfw097n200c3.pdf pdf_icon

SFW095N200C3

SFP098N200C3,SFB096N200C3,SFW097N200C3 N-MOSFET 200V, 8.5m, 135AFeatures Product Summary Low on resistanceV 200V DS Low gate chargeR 8.5m DS(on) typ. Fast switchingI 135A D(Silicon Limited) High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - SFW095N200C3 MOSFET datasheet

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