All MOSFET. SLC500MM10SCT2 Datasheet

 

SLC500MM10SCT2 Datasheet and Replacement


   Type Designator: SLC500MM10SCT2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 694 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 500 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 240 nS
   Cossⓘ - Output Capacitance: 4700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: MODULE
 

 SLC500MM10SCT2 substitution

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SLC500MM10SCT2 Datasheet (PDF)

 ..1. Size:735K  cn scilicon
 slc500mm10sct2.pdf pdf_icon

SLC500MM10SCT2

SLC500MM10SCT2100V NMOSFET500AAutomotive 100 V N-Channel MOSFET,500A Half-Bridge Power Module.VDSS=100VID nom=500ARDS(ON) typ=1.05m Features Low Rdson High current density High Ruggedness HalfbridgeEasy paralleling Ap

 5.1. Size:717K  cn scilicon
 slc500mm15shn2.pdf pdf_icon

SLC500MM10SCT2

SLC500MM15SHN2150V NMOSFET500AAutomotive 150 V N-Channel MOSFET,500A Half-Bridge Power Module.VDSS=150VID nom=500ARDS(ON) typ=1.2m Features Low Rdson High current density High Ruggedness HalfbridgeEasy paralleling App

 6.1. Size:810K  cn scilicon
 slc500mm20shn2.pdf pdf_icon

SLC500MM10SCT2

SLC500MM20SHN2200V NMOSFET500AAutomotive 200 V N-Channel MOSFET,500A Half-Bridge Power Module.VDSS=200VID nom=500ARDS(ON) typ=2.5m Features Low Rdson High current density High Ruggedness HalfbridgeEasy paralleling App

Datasheet: SFW082N165C3 , SFW095N200C3 , SFW097N200C3 , SFW107N200C3 , SFW132N200I3 , SFW1800N650C2 , SFW280N600BC4 , SFW280N600C4 , AON7403 , SLC500MM15SHN2 , SLC500MM20SHN2 , SLC700MM10SCN2 , 2N70NL , AJCS10N65CT , AJCS160N08I , JCS10N65B , JCS10N65C .

History: WMP08N65C4 | SFW1800N650C2 | AP1003BST | SLC500MM15SHN2

Keywords - SLC500MM10SCT2 MOSFET datasheet

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 SLC500MM10SCT2 replacement

 

 
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