SLC500MM15SHN2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SLC500MM15SHN2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 955 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 500 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 524 nC
trⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 2600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: MODULE
SLC500MM15SHN2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLC500MM15SHN2 Datasheet (PDF)
slc500mm15shn2.pdf
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