All MOSFET. JCS110N07I Datasheet

 

JCS110N07I MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS110N07I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   Rise Time (tr): 87 nS
   Drain-Source Capacitance (Cd): 500 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO220

 JCS110N07I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS110N07I Datasheet (PDF)

 ..1. Size:476K  jilin sino
jcs110n07i.pdf

JCS110N07I
JCS110N07I

N N-CHANNEL MOSFET JCS110N07I MAIN CHARACTERISTICS Package ID 110A VDSS 70V Rdson-max - 8m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app

 5.1. Size:502K  jilin sino
jcs110n07.pdf

JCS110N07I
JCS110N07I

N N-CHANNEL MOSFET JCS110N07I Package MAIN CHARACTERISTICS 110A I D 70V VDSS Rdson-max 8m - (@Vgs=10V 72nC Qg-typ APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Aut

 9.1. Size:1513K  jilin sino
jcs11n90wt jcs11n90abt.pdf

JCS110N07I
JCS110N07I

N RN-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS Package ID 11 A VDSS 900 V Rdson-max1.10 Vgs=10V Qg-typ 66nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPB65R115CFD7A

 

 
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