JCS12N65BEI MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

JCS12N65BEI Specs and Replacement

Type Designator: JCS12N65BEI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75.5 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO262

JCS12N65BEI substitution

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JCS12N65BEI datasheet

..1. Size:1489K jilin sino
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE... See More ⇒

5.1. Size:1410K jilin sino
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒

6.1. Size:1140K 1
jcs12n65t.pdf pdf_icon

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson @Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒

6.2. Size:543K jilin sino
jcs12n65f.pdf pdf_icon