JCS13AN50SC MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS13AN50SC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32.1 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 203 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO263
JCS13AN50SC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS13AN50SC Datasheet (PDF)
jcs13an50bc jcs13an50sc jcs13an50cc jcs13an50fc.pdf
N N- CHANNEL MOSFET RJCS13AN50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max(@Vgs=10V) 0.45 Qg 32.1 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
jcs13n50bc jcs13n50sc jcs13n50cc jcs13n50fc.pdf
N N- CHANNEL MOSFET RJCS13N50C MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson@Vgs=10V 0.49 Qg 27 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATURES
jcs13n50ft.pdf
N N- CHANNEL MOSFET RJCS13N50FT MAIN CHARACTERISTICS Package ID 13 A VDSS 500 V Rdson-max@Vgs=10V 0.46 Qg-typ 37 nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS FEATUR
jcs13n90aba jcs13n90wa.pdf
N RN-CHANNEL MOSFET JCS13N90A MAIN CHARACTERISTICS Package ID 13.0 A VDSS 900 V RdsonVgs=10V 0.75 -MAX Qg-Typ 66.64 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power s
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