JCS18N25VC Datasheet. Specs and Replacement

Type Designator: JCS18N25VC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 178.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: IPAK

JCS18N25VC substitution

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JCS18N25VC datasheet

 ..1. Size:721K  jilin sino
 jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf pdf_icon

JCS18N25VC

N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS ... See More ⇒

 8.1. Size:948K  jilin sino
 jcs18n50wh.pdf pdf_icon

JCS18N25VC

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 8.2. Size:1873K  jilin sino
 jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf pdf_icon

JCS18N25VC

N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒

 8.3. Size:1269K  jilin sino
 jcs18n50we jcs18n50abe.pdf pdf_icon

JCS18N25VC

N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

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Detailed specifications: JCS15N65SEI, JCS15N70FC, JCS16N25CC, JCS16N25RC, JCS16N25VC, JCS18N25CC, JCS18N25FC, JCS18N25RC, AON7408, JCS18N50ABE, JCS18N50BE, JCS18N50CE, JCS18N50FE, JCS18N50SE, JCS18N50WE, JCS20N60WH, JCS20N65FEI

Keywords - JCS18N25VC MOSFET specs

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