All MOSFET. JCS18N50SE Datasheet

 

JCS18N50SE MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS18N50SE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 197.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48.7 nC
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO263

 JCS18N50SE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS18N50SE Datasheet (PDF)

 ..1. Size:1873K  jilin sino
 jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf

JCS18N50SE JCS18N50SE

N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 6.1. Size:948K  jilin sino
 jcs18n50wh.pdf

JCS18N50SE JCS18N50SE

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi

 6.2. Size:1269K  jilin sino
 jcs18n50we jcs18n50abe.pdf

JCS18N50SE JCS18N50SE

N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 8.1. Size:721K  jilin sino
 jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf

JCS18N50SE JCS18N50SE

N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS

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History: AON7423 | NCEP30P90G | F5038H | IRFIZ44A

 

 
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