JCS20N65FEI MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS20N65FEI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 64.6 nC
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
JCS20N65FEI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS20N65FEI Datasheet (PDF)
jcs20n65fei.pdf
N RN-CHANNEL MOSFETJCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power
jcs20n65fh jcs20n65wh.pdf
N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs20n60wh.pdf
N N- CHANNEL MOSFET RJCS20N60WH MAIN CHARACTERISTICS Package ID 20 A VDSS 600 V Rdson@Vgs=10V 0.39 Qg 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs20n60fh.pdf
N RN-CHANNEL MOSFET JCS20N60FH Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.39 Vgs=10V Qg-Typ 50nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
